Electro-optical 1 x 2, 1 x N and N x N fiber-optic and free-space switching over 155 to 30 μm using a Ge-Ge_2Sb_2Te_5-Ge prism structure
نویسندگان
چکیده
منابع مشابه
Electro-optical 1 x 2, 1 x N and N x N fiber-optic and free-space switching over 1.55 to 3.0 μm using a Ge-Ge(2)Sb(2)Te(5)-Ge prism structure.
New device designs are proposed and theoretical simulations are performed on electro-optical routing switches in which light beams enter and exit the device either from free space or from lensed fibers. The active medium is a ~100 nm layer of phase change material (Ge(2)Sb(2)Te(5) or GeTe) that is electrically "triggered" to change its phase, giving "self-holding" behavior in each of two phases...
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Using low energy electron microscopy, we have investigated the (2 x 1)-(1 x 1) phase transition occurring above 925 K on Ge(001). Dimer breakup has been identified as the physical origin of this transition. A quantitative description of the dimer concentration during the transition involves configuration entropy of random monomers within the dimer matrix. The dimer formation energy amounts to 1...
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متن کاملComposition controlled synthesis and Raman analysis of Ge-rich Si(x)Ge(1-x) nanowires.
Here, we report the synthesis of Si(x)Ge(1-x) nanowires with x values ranging from 0 to 0.5 using bulk nucleation and growth from larger Ga droplets. Room temperature Raman spectroscopy is shown to determine the composition of the as-synthesized Si(x)Ge(1-x) nanowires. Analysis of peak intensities observed for Ge (near 300 cm(-1)) and the Si-Ge alloy (near 400 cm(-1)) allowed accurate estimatio...
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ژورنال
عنوان ژورنال: Optics Express
سال: 2015
ISSN: 1094-4087
DOI: 10.1364/oe.23.000072